Amorphous (CeO2)0.67(Al2O3)0.33 high-k gate dielectric thin films on silicon

Semiconductor Science and Technology

Volumn 18, Issue 7, 2003, Pages

  Yan, L ^a   Kong, L B ^a   Li, Q ^a   Ong, C K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CAPACITANCE MEASUREMENT; CERIUM COMPOUNDS; DIELECTRIC FILMS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; GATES (TRANSISTOR); MOS DEVICES; PERMITTIVITY; PHYSICAL PROPERTIES; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON;

GATE DIELECTRIC THIN FILMS; HIGH ACCUMULATION CAPACITANCE; LOW LEAKAGE CURRENT DENSITY; THIN INTERFACIAL LAYER;

THIN FILMS;

EID: 0038487673     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/7/101     Document Type: Letter

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