Electron and ion tracks in silicon: Spatial and temporal evolution

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3046-3054

  Murat, Michael ^a   Akkerman, Avraham ^a   Barak, Joseph ^a  

^a SOREQ NUCLEAR RESEARCH CENTER   (Israel)

Author keywords

Charge radial distribution; Monte Carlo simulation; Multiple bit upset (MBU); Straggling effects; Time evolution of track structure

Indexed keywords

ATOMS; IONS; MONTE CARLO METHODS; NANOELECTRONICS; SECONDARY EMISSION;

CHARGE RADIAL DISTRIBUTION; MONTE-CARLO SIMULATION; MULTIPLE BIT UPSET (MBU); STRAGGLING EFFECTS; TIME EVOLUTION OF TRACK STRUCTURE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58849162308     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007646     Document Type: Conference Paper

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