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1
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8444229586
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Single-event analysis and prediction
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Snowmass Village, CO, July 21
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E. Petersen, "Single-event analysis and prediction," presented at the IEEE NSREC Short Course, Snowmass Village, CO, July 21, 1997.
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IEEE NSREC Short Course
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Petersen, E.1
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2
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0030166446
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A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness
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June
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J. Barak, J. Levinson, A. Akkerman, M. Hass, M. Victoria, A. Zentner, D. David, O. Even, and Y. Lifshitz, "A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness," IEEE Trans. Nucl. Sci., vol. 43, pp. 907-911, June 1996.
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Even, O.8
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3
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0031636894
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Estimation of upset sensitive volume thickness and critical energy using low energy heavy-ion beams
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Cannes, France, Sept.
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R. Ecoffet, S. Duzellier, J. Barak, J. Levinson, Y. Lifscitz, M. Hass, C. Inguimbert, and C. Detcheverry, "Estimation of upset sensitive volume thickness and critical energy using low energy heavy-ion beams," in Proc. 4th RADECS Conf., Cannes, France, Sept. 1997, pp. 576-583.
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Ecoffet, R.1
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Lifscitz, Y.5
Hass, M.6
Inguimbert, C.7
Detcheverry, C.8
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4
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0034204840
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Using a carbon beam as a probe to extract the thickness of sensitive volumes
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June
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C. Inguimbert, S. Duzellier, R. Ecoffet, L. Guibert, J. Barak, and M. Chabot, "Using a carbon beam as a probe to extract the thickness of sensitive volumes," IEEE Trans. Nucl. Sci., vol. 47, pp. 551-558, June 2000.
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IEEE Trans. Nucl. Sci.
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Inguimbert, C.1
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5
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0036624369
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Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs
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June
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C. Inguimbert, S. Duzellier, and R. Ecoffet, "Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs," IEEE Trans. Nucl. Sci., vol. 49, pp. 1480-1485, June 2002.
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Inguimbert, C.1
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0033311546
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Scaling of SEU mapping and cross section, and proton induced SEU at reduced supply voltage
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Dec.
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J. Barak, J. Levinson, A. Akkerman, E. Adler, A. Zentner, D. David, Y. Lifshitz, M. Hass, B. E. Fischer, M. Schlögl, M. Victoria, and W. Hajdas, "Scaling of SEU mapping and cross section, and proton induced SEU at reduced supply voltage," IEEE Trans. Nucl. Sci., vol. 46, pp. 1342-1353, Dec. 1999.
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7
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0032095440
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Microbeam mapping of single-event latchup and single-event upset in CMOS SRAMs
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June
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J. Barak, E. Adler, B. E. Fischer, M. Schlögl, and S. Metzger, "Microbeam mapping of single-event latchup and single-event upset in CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 45, pp. 1595-1602, June 1998.
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Barak, J.1
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8
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0025639384
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Alpha-particle sensitive test SRAMs
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M. G. Buehler and B. R. Blaes, "Alpha-particle sensitive test SRAMs," IEEE Trans. Nucl. Sci., vol. 38, pp. 1849-1854, Dec. 1990.
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Buehler, M.G.1
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Bench-level characterization of a CMOS standard-cell D-latch using alpha-particle sensitive test circuit
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Dec.
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B. R. Blaes, G. A. Soli, and M. G. Buehler, "Bench-level characterization of a CMOS standard-cell D-latch using alpha-particle sensitive test circuit," IEEE Trans. Nucl. Sci., vol. 38, pp. 1486-1492, Dec. 1991.
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Blaes, B.R.1
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10
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0027841916
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Monitoring SEU parameters at reduced bias
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Dec.
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D. R. Roth, P. J. McNulty, W. G. Abdel-Kader, L. Strauss, and E. G. Stassinopoulos, "Monitoring SEU parameters at reduced bias," IEEE Trans. Nucl. Sci., vol. 40, pp. 1721-1724, Dec. 1993.
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Roth, D.R.1
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11
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0031549073
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Simultaneous imaging of upset- And latchup-sensitive regions in a static RAM
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B. E. Fischer, M. Schlögl, J. Barak, E. Adler, and S. Metzger, "Simultaneous imaging of upset- and latchup-sensitive regions in a static RAM," Nucl. Instrum. Methods Phys. Res. B, vol. 130, pp. 478-485, 1997.
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12
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11044236045
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The Soreq radiation monitor for detecting protons and heavy ions in space and its preliminary flight data on Gurwin-II Techsat (G032)
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July
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J. Barak, E. Adler, M. Murat, J. Levinson, I. Flohr, R. Waller, and Y. Lifshitz, "The Soreq radiation monitor for detecting protons and heavy ions in space and its preliminary flight data on Gurwin-II Techsat (G032)," in Proc. 14th AMSAT-UK Colloquium, SpaceComm-99, July 1999, pp. 2-9.
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13
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0035720575
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Analytical microdosimetry model for proton induced SEU in modern devices
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Dec.
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J. Barak, "Analytical microdosimetry model for proton induced SEU in modern devices," IEEE Trans. Nucl. Sci., vol. 48, pp. 1937-1945, Dec. 2001.
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Barak, J.1
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11044225139
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Single-event upset mechanisms and predictions
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Gatlinburg, TN, July 17
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J. C. Pickel, "single-event upset mechanisms and predictions," presented at the IEEE NSREC Short Course, Gatlinburg, TN, July 17, 1983.
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IEEE NSREC Short Course
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Pickel, J.C.1
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15
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84937995134
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Cosmic-ray-induced errors in MOS devices
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Apr.
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Pickel, J.C.1
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Microdose analysis of ion strikes on SRAM cells
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Dec.
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L. Scheick, "Microdose analysis of ion strikes on SRAM cells," IEEE Trans. Nucl. Sci., vol. 50, pp. 2399-2406, Dec. 2003.
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Scheick, L.1
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Ion-track structure and its effects in small size volume of silicon
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Dec.
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A. Akkerman and J. Barak, "Ion-track structure and its effects in small size volume of silicon," IEEE Trans. Nucl. Sci., vol. 49, pp. 3022-3031, Dec. 2002.
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IEEE Trans. Nucl. Sci.
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Akkerman, A.1
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Microdosimetry theory for microelectronics applications
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M. A. Xapsos, G. P. Summers, E. A. Burke, and C. Poivey, "Microdosimetry theory for microelectronics applications," Nucl. Instrum. Methods Phys. Res. B, vol. 184, pp. 113-134, 2001.
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