Monte-Carlo simulations of ion track in silicon and influence of its spatial distribution on single event effects

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 245, Issue 2, 2006, Pages 464-474

  Colladant, T ^a   L'Hoir, A ^b   Sauvestre, J E ^a   Flament, O ^a  

^a CEA DIF   (France)

^b INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

Charge collection; Energy deposition; Ion track structure; Monte Carlo; Recombination; Silicon; SOI transistors; Swift ion and electron interaction with matter

Indexed keywords

APPROXIMATION THEORY; HEAVY IONS; ION BOMBARDMENT; MONTE CARLO METHODS; TRANSISTORS;

CHARGE COLLECTION; ENERGY DEPOSITION; ION TRACK STRUCTURE; RECOMBINATION; SOI TRANSISTORS; SWIFT ION AND ELECTRON INTERACTION WITH MATTER;

SILICON;

EID: 33644777637     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.11.144     Document Type: Article

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