The role of ion track structure on high-injection carrier dynamics in high-speed Si and III-V optoelectronic sensors

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2384-2393

  Laird, Jamie S ^a   Onoda, Shinobu ^b   Hirao, Toshio ^b   Edmonds, Larry ^a   Ohshima, Takeshi ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

GaAs; Heavy ion; High frequency; High injection effects; III V; Ion track structure; Optoelectronics; Picosecond laser; Si; Space charge screening; Transient current; Ultrafast

Indexed keywords

ELECTRIC SPACE CHARGE; HEAVY IONS; MATHEMATICAL MODELS; OPTICAL SENSORS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSIENT ANALYSIS;

HIGH-INJECTION EFFECTS; ION TRACK STRUCTURES; PICOSECOND LASERS; SPACE-CHARGE SCREENING; TRANSIENT CURRENTS;

OPTOELECTRONIC DEVICES;

EID: 37249035180     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.911421     Document Type: Conference Paper

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