Effects of Random Dopant Fluctuations (RDF) on the single event vulnerability of 90 and 65 nm CMOS technologies

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2400-2406

  Balasubramanian, A ^a,b   Fleming, P R ^a,b   Bhuva, B L ^a,b   Amusan, O A ^a,b   Massengill, L W ^a,b  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

Complementary metal oxide semiconductor (CMOS); Critical charge (Q crit); Random dopant fluctuations (RDF); Single event transient (SET); Single event upset (SEUs); Static random access memory (SRAM); V t variations

Indexed keywords

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS); CRITICAL CHARGE; RANDOM DOPANT FLUCTUATIONS (RDF); SINGLE EVENT TRANSIENT (SET); SINGLE EVENT UPSET (SEU); VARIATIONS;

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC SPACE CHARGE; LOGIC CIRCUITS; MONTE CARLO METHODS; PARAMETER ESTIMATION; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE;

CMOS INTEGRATED CIRCUITS;

EID: 37249083030     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.908167     Document Type: Conference Paper

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