Charge yield and related phenomena induced by ionizing radiation in SiO 2 layers

IEEE Transactions on Nuclear Science

Volumn 53, Issue 4, 2006, Pages 1973-1980

  Murat, M ^a,b   Akkerman, A ^a,b   Barak, J ^a,b  

^a IEEE   (Israel)

^b SOREQ NUCLEAR RESEARCH CENTER   (Israel)

Author keywords

Charge yield; Electron hole pairs; Energy deposition; Recombination; Single hard error; Straggling; Total ionizing dose (TID)

Indexed keywords

CHARGE YIELD; GEMINATE MODELS; NUCLEAR INTERACTIONS;

COMPUTER SIMULATION; HOLE MOBILITY; IONIZING RADIATION; MONTE CARLO METHODS;

SILICA;

EID: 33748356298     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.875050     Document Type: Conference Paper

References (31)

1. T. R. Oldham and F. B. McLean, "Total ionizing dose effects in MOS oxides and devices," IEEE Trans. Nucl. Sci., vol. 50, pp. 483-499, Jun. 2003.
2. 2 films," J. Appl. Phys., vol. 57, pp. 2695-2702, 1985.
3. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits. New York: Wiley, 1989.
4. 2," IEEE Trans. Nucl. Sci., vol. 51, pp. 3211-3218, Dec. 2004.
5. A. Akkerman, J. Barak, and D. Emfietzoglou, "Ion and electron track-structure and its effects in silicon: Model and calculations," Nucl. Instrum. Methods Phys. Res. B, vol. 227, pp. 319-336, 2005.
6. 2 for H, He, and N," Phys. Rev. A, vol. 64, pp. 012902-0112906, 2001.
7. International Commission on Radiation Units and Measurements, Stopping powers and ranges for protons and alpha particles Bethesda, MD, ICRU 49 Report, 1992.
8. P. Bauer, R. Golser, D. Semrad, P. Maier-Komor, F. Aumayr, and A. Arnau, "Influence of the chemical state on the stopping of protons and He-ions in some oxides," Nucl. Instrum. Methods Phys. Res. B, vol. 136-138, pp. 103-108, 1998.
9. J. F. Ziegler, "SRIM-2003," Nucl. Instrum. Methods Phys. Res. B, vol. 219-220, pp. 1027-1036, 2004.
10. 2," Nucl. Instrum. Methods Phys. Res. B, vol. 14, pp. 169-172, 1986.
11. M. E. Rudd, "User-friendly model for the energy distribution of electrons from proton or electron collisions," Nucl. Tracks Radiation Meas., pp. 213-218, 1989.
12. F. Sauter, "Über den atomaren Photoeffekt in der K-Schale nach der relativistischen Wellenmechanik Diracs," Ann. Physik, vol. 11, pp. 454-488, 1931.
13. J. H. Hubbell and S. M. Seltzer, Tables of X-Ray Mass Attenuation Coefficients and Mass Energy-Absorption Coefficients, (version 1.4). Gaithersburg, MD: National Institute of Standards and Technology, 2004 [Online]. Available: http://physics.nist.gov/xaamdi
14. F. Biggs and R. Lighthill, "Analytical approximations for X-ray cross sections III," SAND 87 - 0070, May 1990, Reprinted.
15. C. D. Wagner, A. V. Naumkin, A. Kraut-Vass, J. W. Allison, C. J. Powell, and J. R. Rumble, Jr., NIST X-ray Photoelectron Spectroscopy Database: NIST Standard Reference Database 20, ver. 3.4, 2003 [On-line]. Available: http://srdata.nist.gov/xps/
16. D. J. DiMaria, M. V. Fischetti, E. Tierney, and S. D. Borson, "Direct observation of the threshold for electron heating in silicon dioxide," Phys. Rev. Lett., vol. 56, pp. 1284-1286, 1986.
17. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, and K. L. Hughes, "Charge yield for cobalt-60 and 10-keV X-ray irradiations," IEEE Trans. Nucl. Sci., vol. 38, pp. 1187-1194, Dec. 1991.
18. T. R. Oldham, "Analysis of damage in MOS devices for several radiation environments," IEEE Trans. Nucl. Sci., vol. 31, pp. 1236-1241, Dec. 1984.
19. C. M. Dozier and D. B. Brown, "Effect of photon energy on the response of MOS devices," IEEE Trans. Nucl. Sci., vol. 28, pp. 4137-4141, Dec. 1981.
20. O. Fageeha, J. Howard, and R. C. Block, "Distribution of radial energy deposition around the track of energetic charged particles in silicon," J. Appl. Phys., vol. 75, pp. 2317-2321, 1994.
21. G. A. Ausman, "Field dependence of geminate recombination in a dielectric medium," Adelphi, MD, Harry Diamond Lab. Tech. Rep. 2097, 1987.
22. J. N. Bradford, "Clusters in ionization tracks of electrons in silicon dioxide," IEEE Trans. Nucl. Sci., vol. 33, pp. 1271-1275, Dec. 1986.
23. S. M. Seltzer, Updated Calculations for Routine Space-Shielding Radiation Dose Estimates: SHIELDOSE-2. Gaithersburg, MD: NIST Publication, 1994, NISTIR 5477.
24. J. Barak, "Analytical microdosimetry model for proton-induced SEU in modern devices," IEEE Trans. Nucl. Sci., vol. 48, pp. 1937-1945, Dec. 2001.
25. Nuclear data for neutron and proton radiotherapy and for radiation protection Bethesda, MD, ICRU Rep. 63, 2000, Int. Commiss. Radiation Units and Measurements.
26. M. A. Xapsos, "Hard error dose distributions of gate oxide arrays in the laboratory and space environments," IEEE Trans. Nucl. Sci., vol. 43, pp. 3139-3144, Dec. 1996.
27. T. R. Oldham, K. W. Bennet, J. Beaucour, T. Carriere, C. Poivey, and P. Garnier, "Total dose failure in advanced electronics from single ions," IEEE Trans. Nucl. Sci., vol. 40, pp. 1820-1830, Dec. 1993.
28. C. Poivey, T. Carriere, J. Beaucour, and T. R. Oldham, "Characterization of single hard errors (SHE) in 1M-bit SRAMs from single ion," IEEE Trans. Nucl. Sci., vol. 41, pp. 2235-2239, Dec. 1994.
29. L. D. Edmonds, S. M. Guertin, L. Z. Scheick, D. Nguyen, and G. M. Swift, "Ion-induced stuck bits in 1T/1C SDRAM cells," IEEE Trans. Nucl. Sci., vol. 48, pp. 1925-1930, Dec. 2001.
30. A. Akkerman and J. Barak, "Ion-track structure and its effects in small size volume of silicon," IEEE Trans. Nucl. Sci., vol. 49, pp. 3022-3031, Dec. 2002.
31. J. Barak and A. Akkerman, "Straggling and extreme cases in the energy deposition by ions in thin silicon layers," IEEE Trans. Nucl. Sci., vol. 52, pp. 2175-2181, Dec. 2005.