Effect of initial process conditions on the structural properties of AlN films

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 259-265

  Paduano, Q S ^a   Weyburne, D W ^a   Jasinski, J ^b   Liliental Weber, Z ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A1. Atomic force microscopy; A1. Crystal morphology; A1. High resolution X ray diffraction; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; AMMONIA; ATOMIC FORCE MICROSCOPY; HEAT TREATMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTOELECTRONIC DEVICES; PIEZOELECTRICITY; SAPPHIRE; THERMAL CONDUCTIVITY; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FLOW RATES; NITRIDATION;

SEMICONDUCTING FILMS;

EID: 0347415801     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.017     Document Type: Conference Paper

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