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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2305-2308

Flat surfaces and interfaces in AlN/GaN heterostructures and superlattices grown by flow-rate modulation epitaxy

(2) Hiroki, Masanobu a Kobayashi, Naoki a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

AlN; AlN GaN heterostructure; FME; GaN; MOVPE

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTOR SUPERLATTICES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FLAT SURFACES; FLOW RATE MODULATION EPITAXY; GROWTH EFFICIENCY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0038009717 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.2305 Document Type: Article

Times cited : (25)

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