Sol-gel synthesis of high-k HfO2 thin films

Journal of the American Ceramic Society

Volumn 92, Issue SUPPL. 1, 2009, Pages

  Suzuki, Kazuyuki ^a   Kato, Kazumi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COLLOIDS; DECOMPOSITION; GELATION; GRAIN GROWTH; HAFNIUM COMPOUNDS; LIGHT REFRACTION; MICROCRYSTALLINE SILICON; MICROSTRUCTURE; OPTICAL INSTRUMENTS; OPTICAL PROPERTIES; POLYIMIDES; POLYMERS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING SILICON COMPOUNDS;

CHEMICAL COMPOSITIONS; DIELECTRIC CONSTANTS; DIETHANOL AMINES; GEL SYNTHESES; INTEGRATED OPTICAL DEVICES; MICROSTRUCTURE DEVELOPMENTS; ORGANIC DECOMPOSITIONS; POLYIMIDE FILMS; PRECURSOR SOLUTIONS; SI SUBSTRATES;

FILM PREPARATION;

EID: 58149359202     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2008.02649.x     Document Type: Conference Paper

References (21)

1. M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka M. M. Heyns Trap-Assisted Tunneling in High Permittivity Gate Dielectric Stacks J. Appl. Phys., 87, 8615 20 (2000).
2. L. F. Schneemeyer, R. B. van Dover R. M. Fleming High Dielectric Constant Hf-Sn-Ti-O Thin Films Appl. Phys. Lett., 75, 1967 9 (1999).
3. M. Copel, M. Gribelyuk E. Gusev Structure and Stability of Ultrathin Zirconium Oxide Layers on Si(001) Appl. Phys. Lett., 76, 436 8 (2000).
4. S. Horita, M. Watanabe, S. Umemoto A. Masuda Material Properties of Heteroepitaxial Yttria-Stabilized Zirconia Films with Controlled Yttria Contents on Si Prepared by Reactive Sputtering Vacuum, 51, 609 13 (1998).
5. S. Duenas, H. Castan, J. Barbolla, K. Kukli, M. Ritala M. Leskela Conductance Transient, Capacitance-Voltage and Deep-Level Transient Spectroscopy Characterization of Atomic Layer Deposited Hafnium and Zirconium Oxide Thin Films Solid-State Electron., 47, 1623 9 (2003).
6. B. H. Lee, L. Kang, R. Nieh, W. J. Qi J. C. Lee Thermal Stability and Electrical Characteristics of Ultrathin Hafnium Oxide Gate Dielectric Reoxidized with Rapid Thermal Annealing Appl. Phys. Lett., 76, 1926 8 (2000).
7. 2/Si Structure: Interfacial Si Oxidation and Silicidation Jpn. J. Appl. Phys., 42, L138 40 (2003).
8. 2 Appl. Surf. Sci., 240, 105 11 (2005).
9. 2 Thin Solid Films, 462-463, 90 5 (2004).
10. H. Wong, N. Zhan, K. L. Ng, M. C. Poon C. W. Kok Interface and Oxide Traps in High-k Hafnium Oxide Films Thin Solid Films, 462-463, 96 100 (2004).
11. 2 Dielectric Layers Grown by Metalorganic Molecular Beam Epitaxy Microelectron. Eng., 75, 263 8 (2004).
12. 2 Films Mater. Sci. Eng. B, 109, 11 6 (2004).
13. 2 Insulators on Si Mater. Sci. Eng. B, 109, 74 7 (2004).
14. 2 Thin Films on Silicon Wafers Jap. J. Appl. Phys., 43, 6992 3 (2004).
15. 2 High-k Gate Dielectric Grown by Anodic Oxidation or Deposited by Sol-Gel Microelectron. Reliab., 47, 372 7 (2007).
16. 2 Sol-Gel Material Optical Mater., 24, 51 7 (2003).
17. 2 Nanothick Sol-Gel Waveguiding Films Rev. Adv. Mater. Sci., 5, 296 301 (2003).
18. 2 Nano-Films; Formation of Uniform, Void-Free Layers and Their Superior Electrical Properties Chem. Mater., 17, 450 8 (2005).
19. 2/Si Jpn. J. Appl. Phys., 46, 6956 9 (2007).
20. 2/Si Structures Integr. Ferroelecr., 94, 3 10 (2007).
21. 2/Si Structures Key Eng. Mater., 350, 107 10 (2007).