Thermal stability of a thin HfO2/ultrathin SiO2/Si structure: Interfacial Si oxidation and silicidation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 2 B, 2003, Pages

  Miyata, Noriyuki ^a   Ichikawa, Masakazu ^a,b   Nabatame, Toshihide ^a   Horikawa, Tsuyoshi ^a   Toriumi, Akira ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

HfO2; High k; Silicide; Thermal stability; Void

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); INTERFACIAL ENERGY; NUCLEATION; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICA; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM DIOXIDE; INTERFACIAL OXIDATION; METAL-INSULATOR-SEMICONDUCTOR DEVICE; MICROPROBE AUGER ELECTRON SPECTROSCOPY; SILICIDATION; ULTRAHIGH VACUUM ELECTRON-BEAM EVAPORATION SYSTEM;

ULTRATHIN FILMS;

EID: 0037442260     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.L138     Document Type: Letter

References (20)

1. G. D. Wilk, R. M. Wallace and J. M. Anthony: J. Appl. Phys. 89 (2001) 5243.
2. N. Narasaki, M. Yamaoka, H. Murakami, S. Miyazaki and M. Hirose: Ext. Abstr. (62nd Autumn Meet. 2001); Japan Society of Applied Physics and Related Societies, 11p-y-6.
3. B. W. Busch, W. H. Schulte, E. Garfunkel, T. Gustafsson, W. Qi, R. Nieh and J. Lee: Phys. Rev. B 62 (2000) R13290.
4. M. Copel, M. Gribelyuk and E. Gusev: Appl. Phys. Lett. 76 (2000) 436.
5. H. Watanabe: Appl. Phys. Lett. 78 (2001) 3803.
6. T. S. Jeon, J. M. White and D. L. Kwong: Appl. Phys. Lett. 78 (2001) 368.
7. H. Watanabe and N. Ikarashi: Appl. Phys. Lett. 80 (2002) 559.
8. K. Muraoka: Appl. Phys. Lett. 80 (2002) 4516.
9. M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D.-H. Ko, J. H. Lee, N. I. Lee and K. Fujihara: Appl. Phys. Lett. 81 (2002) 472.
10. N. Miyata, H. Watanabe and M. Ichikawa: Phys. Rev. Lett. 84 (2000) 1043.
11. H. Watanabe and M. Ichikawa: Rev. Sci. Instrum. 67 (1996) 4185.
12. 2 determined by TEM.
13. N. Miyata, M. Shigeno, Y. Arimoto and T. Ito: J. Appl. Phys. 74 (1993) 5275.
14. H. Watanabe, K. Kato, T. Uda, K. Fujita, M. Ichikawa, T. Kawamura and K. Terakura: Phys. Rev. Lett. 80 (1998) 345.
15. M. Kundu, M. Ichikawa and N. Miyata: J. Appl. Phys. 91 (2002) 492.
16. S. Fujita, S. Maruno, H. Watanabe and M. Ichikawa: J. Vac. Sci. & Technol. A 15 (1997) 1493.
17. N. Miyata, M. Ichikawa, T. Nabatame and A. Toriumi: Ext. Abstr. Solid State Devices & Materials (Business Center for Academic Societies Japan, Tokyo, 2002) p. 478.
18. R. Tromp, G. W. Rubloff, P. Balk and F. K. LeGoues: Phys. Rev. Lett. 55 (1985) 2332.
19. L. Kang, K. Onishi, Y. Jeon, B. H. Lee, C. Kang, W.-J. Qi, R. Nieh, S. Gopalan, R. Choi and J. C. Lee: IEDM Tech. Dig. (2000) p. 35.
20. S. Pidin, Y. Morisaki, Y. Sugita, T. Aoyama, K. Irino, T. Nakamura and T. Sugii: Dig. Tech. Pap., VLSI Symp. Technology (2002).