Improvement of orientation and characterization of dielectric property for (Y,Yb)MnO3/HfO2/Si structures

Key Engineering Materials

Volumn 350, Issue , 2007, Pages 107-110

  Suzuki, Kazuyuki ^a   Nishizawa, Kaori ^a   Miki, Takeshi ^a   Kato, Kazumi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

(y,Yb)MnO3, Alkoxy derived precursor; FET type nonvolatile memory; MFIS structure; Orientation

Indexed keywords

CAPACITANCE; CHARACTERIZATION; DEPOSITION; DIELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; MICROSTRUCTURE; MOLECULAR ORIENTATION;

ALKOXY-DERIVED PRECURSORS; PRECURSOR SOLUTIONS; RETENTION PROPERTY; STACKING LAYERS;

YTTRIUM COMPOUNDS;

EID: 34547513157     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/0-87849-449-9.107     Document Type: Conference Paper

References (11)

1. G. A. Smolenskii and V. A. Bokov, J. Appl. Phys. 35, 915 (1964).
2. T. Hirai, Y. Fujisaki, K. Nagashima, H. Koike and Y. Tarui, Jpn. J. Appl. Phys. 36, 5908 (1997).
3. E. Tokumitsu, G. Fujii and H. Ishiwara, Appl. Phys. Lett. 75, 575 (1999).
4. N. Fujimura, S. Azuma, N. Aoki, T. Yoshimura and T. Ito, J. Appl. Phys. 80, 7084 (1996).
5. S. Imada, T. Kuraoka, E. Tokumitsu and H. Ishiwara, Jpn. J. Appl. Phys. 40, 666 (2001).
6. K. J. Choi, W. C. Shin and S. G. Yoon, Thin Solid Films 384, 146 (2001).
7. D. Ito, N. Fujimura, K. Kakuno, T. Ito, Ferroelectrics 271, 87 (2002).
8. W. Yi, J. Choe, C. Moon, S. Kwun and J. Yoon, Appl. Phys. Lett. 73, 903 (1998).
9. K. Suzuki, D. Fu, K. Nishizawa, T. Miki and K. Kato, Jpn. J. Appl. Phys. 42, 6007 (2003).
10. K. Suzuki, K. Tanaka, D. Fu, K. Nishizawa, T. Miki and K. Kato, Integr. Ferroelectr. 65, 117 (2004).
11. K. Suzuki, Y. Guo, K. Nishizawa, T. Miki and K. Kato, Key Eng. Mater. 320, 73 (2006).