Crystallization behavior of HfO2 films for (Y,Yb)MnO 3/HfO2/Si structures

Integrated Ferroelectrics

Volumn 94, Issue 1, 2007, Pages 3-10

  Suzuki, Kazuyuki ^a   Kato, Kazumi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

(Y; Alkoxy derived precursor; C V characteristics; FET type nonvolatile memory; HfO 2; Leakage current density; MFIS structure; Yb)MnO3

Indexed keywords

EID: 58149348995     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580701755674     Document Type: Conference Paper

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