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Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

Dielectric scaling of a top gate silicon nanowire on insulator transistor

(2) Bhowmick, Sishir a Alam, Khairul b

a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY (Bangladesh)

b EAST WEST UNIVERSITY (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC CAPACITORS; DIELECTRIC WAVEGUIDES; GATES (TRANSISTOR); MOSFET DEVICES; NANOWIRES; PERMITTIVITY; QUANTUM CHEMISTRY; SILICON COMPOUNDS; THREE DIMENSIONAL; TRANSCONDUCTANCE; TRANSISTORS;

CHANNEL POTENTIALS; CURRENT GAINS; CURRENT RATIOS; DIELECTRIC CONSTANTS; DIELECTRIC SCALING; GATE CAPACITANCES; GATE LENGTHS; GATE OXIDES; K DIELECTRICS; ORDERS OF MAGNITUDES; QUANTUM SIMULATIONS; SILICON NANOWIRES; STATE CURRENTS; SUBTHRESHOLD SLOPES; SWITCHING PERFORMANCES; THINNER OXIDES; TOP GATES; TUNNELING CURRENTS;

GATE DIELECTRICS;

EID: 58149237818 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3043662 Document Type: Article

Times cited : (12)

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