Efficient simulation of silicon nanowire field effect transistors and their scaling behavior

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Shin, Mincheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EIGENVALUES AND EIGENFUNCTIONS; FIELD EFFECT SEMICONDUCTOR DEVICES; GREEN'S FUNCTION; SCHRODINGER EQUATION;

MASS THEORY; PRODUCT-SPACE METHODS; SCALING BEHAVIOR; SILICON NANOWIRES;

NANOWIRES;

EID: 33847746658     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430786     Document Type: Article

References (10)

1. J. T. Park and J. P. Colinge, IEEE Trans. Electron Devices 49, 2222 (2002).
2. Y. Cui, Z. Zhong, D. Wang, W. Wang, and M. Lieber, Nano Lett. 3, 149 (2003).
3. H.-S. Philip Wong, Solid-State Electron. 49, 755 (2005).
4. J. Wang, E. Polizzi, and M. Lundstrom, J. Appl. Phys. 96, 2192 (2004).
5. M. Bescond, K. Nehari, J. L. Autran, N. Cavassilas, D. Munteanu, and M. Lannoo, Tech. Dig. - Int. Electron Devices Meet. 2004, 617.
6. J. Wang, E. Polizzi, A. Ghosh, S. Datta, and M. Lundstrom, Appl. Phys. Lett. 87, 043101 (2005).
7. J. Wang, A. Rahman, A. Ghosh, G. Klimeck, and M. Lundstrom, IEEE Trans. Electron Devices 52, 1589 (2005).
8. K. Nehari, N. Cavassilas, J. L. Autran, M. Bescond, D. Munteanu, and M. Lannoo, Proceedings of the 35th European Solid-State Device Research Conference, 2005 (ESSDERC, 2005), 12-16 Sept. 2005, pp. 229-232.
9. S. Datta, Superlattices Microstruct. 28, 253 (2000).
10. A. Abramo, A. Cardin, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 47, 1858 (2000).