Quantum simulation of device characteristics of silicon nanowire FETs

IEEE Transactions on Nanotechnology

Volumn 6, Issue 2, 2007, Pages 230-237

  Shin, Mincheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Device simulation; MOSFET; Quantum transport

Indexed keywords

COMPUTER SIMULATION; GREEN'S FUNCTION; NANOWIRES; POISSON EQUATION; QUANTUM THEORY; SILICON;

DEVICE SIMULATION; QUANTUM SIMULATION; QUANTUM TRANSPORT; SILICON NANOWIRE FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 33947271521     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.891819     Document Type: Article

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