Effects of high-κ: (HfO2) gate dielectrics in double-gate and cylindrical-nanowire FETs scaled to the ultimate technology nodes

IEEE Transactions on Nanotechnology

Volumn 6, Issue 1, 2007, Pages 90-96

  Gnani, Elena ^a,b   Reggiani, Susanna ^a   Rudan, Massimo ^a,b   Baccarani, Giorgio ^a,b  

^a IEEE   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Gate insulator; HfO2; High materials; MOSFETs; Scaling issues

Indexed keywords

GATE INSULATOR; HIGH-Κ MATERIALS; SCALING ISSUES;

DIELECTRIC MATERIALS; ELECTRON MOBILITY; ELECTROSTATICS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM WIRES; TRANSPORT PROPERTIES;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 33846639145     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.888547     Document Type: Article

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