Field emission properties of self-assembled silicon nanostructures formed by electron beam annealing

Current Applied Physics

Volumn 6, Issue 3, 2006, Pages 503-506

  Johnson, S ^a   Markwitz, A ^a,b   Rudolphi, M ^c   Baumann, H ^c   Oei, S P ^d   Teo, K B K ^d   Milne, W I ^d  

^a GNS SCIENCE   (New Zealand)

^b MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

^c GOETHE UNIVERSITY   (Germany)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Field emission; Self assembly; Silicon nanostructure

Indexed keywords

ANNEALING; ELECTRON BEAMS; ELECTRON EMISSION; ELECTRON TUNNELING; SELF ASSEMBLY; SURFACE ROUGHNESS;

ELECTRON BEAM ANNEALING; FIELD EMISSION; NANOSTRUCTURES COALESCE; SILICON NANOSTRUCTURE;

NANOSTRUCTURED MATERIALS;

EID: 33744517525     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2005.11.049     Document Type: Article

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