Model for doping-induced contrast in photoelectron emission microscopy

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 469-475

  Ballarotto, V W ^a   Siegrist, K ^a   Phaneuf, R J ^a   Williams, E D ^a  

^a Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP REDUCTION; BANDBENDING; DONOR STATE; DOPING DENSITIES; ENERGY DISTRIBUTIONS; INCIDENT PHOTON ENERGY; LOWER LIMITS; P-TYPE DOPING; PHOTOELECTRON EMISSION MICROSCOPY; PHOTON ENERGY; SI DEVICES; SI(0 0 1); STATE DISTRIBUTIONS; SURFACE STATE DENSITY;

PHOTOELECTRONS; PHOTONS; SILICON;

SURFACE STATES;

EID: 0036137256     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1423399     Document Type: Article

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