Imaging and dopant profiling of silicon carbide devices by secondary electron dopant contrast

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 2, 2006, Pages 203-212

  Buzzo, Marco ^a,b,c   Ciappa, Mauro ^a,b   Fichtner, Wolfgang ^a,b  

^a IEEE   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Secondary electron dopant contrast (SEDC); Silicon carbide (SiC); Two dimensional (2 D) dopant profiling

Indexed keywords

SECONDARY ELECTRON DOPANT CONTRAST (SEDC); TWO-DIMENSIONAL (2-D) DOPANT PROFILING;

ELECTRIC PROPERTIES; SEMICONDUCTOR DEVICES; SIGNAL THEORY; SURFACE PROPERTIES; TWO DIMENSIONAL;

SILICON CARBIDE;

EID: 33748092710     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.876605     Document Type: Conference Paper

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