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Volumn 461, Issue 1-3, 2000, Pages

PEEM imaging of dopant contrast in Si(001)

Author keywords

Electron microscopy; Photoelectron emission; Photoemission (total yield); Semi empirical models and model calculations; Silicon; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords


EID: 0012822973     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00619-1     Document Type: Article
Times cited : (18)

References (14)
  • 1
    • 0347467967 scopus 로고
    • Ph.D. Thesis, Free University Press
    • W. Engel, Ph.D. Thesis, Free University Press, 1968.
    • (1968)
    • Engel, W.1
  • 8
    • 0346206769 scopus 로고    scopus 로고
    • Stanford University, Palo Alto, CA. Calculates 1- and 2-D implant profiles with pre-and post-annealing simulations
    • Computer code Suprem-IV, Stanford University, Palo Alto, CA. Calculates 1- and 2-D implant profiles with pre-and post-annealing simulations.
    • Computer Code Suprem-IV


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.