-
1
-
-
0024737146
-
Class-B power MMIC amplifiers with 70 percent power-added efficiency
-
Sep
-
I. J. Bahl et al., "Class-B power MMIC amplifiers with 70 percent power-added efficiency", IEEE Microw. Theory Tech., vol. 37, no. 9, pp. 1315-20, Sep. 1989.
-
(1989)
IEEE Microw. Theory Tech
, vol.37
, Issue.9
, pp. 1315-1320
-
-
Bahl, I.J.1
-
2
-
-
0032686167
-
High power-added efficiency MMIC amplifier for 2.4 GHz wireless communications
-
Jan
-
J. Portilla et al., "High power-added efficiency MMIC amplifier for 2.4 GHz wireless communications", IEEE J. Solid-State Circuits, vol. 34. no. 1, pp. 120-3, Jan. 1999.
-
(1999)
IEEE J. Solid-State Circuits
, vol.34
, Issue.1
, pp. 120-123
-
-
Portilla, J.1
-
3
-
-
0027277651
-
Low voltage GaAs power amplifiers for personal communications at 1.9 GHz
-
Jun
-
D. Ngo et al., "Low voltage GaAs power amplifiers for personal communications at 1.9 GHz." in IEEE MTT-S Dig., Jun. 1993. vol. 3, pp. 1461-4.
-
(1993)
IEEE MTT-S Dig
, vol.3
, pp. 1461-1464
-
-
Ngo, D.1
-
5
-
-
0036313026
-
A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC poweramplifier module
-
Jun
-
K. Asada et al., "A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC poweramplifier module", in IEEE Radio Frequency Integrated Circuits (RFIC) Symp. Dig., Jun. 2002, pp. 245-248."
-
(2002)
IEEE Radio Frequency Integrated Circuits (RFIC) Symp. Dig
, pp. 245-248
-
-
Asada, K.1
-
6
-
-
34748818716
-
A flip-chip silicon IPMOS power amplifier and a DC/DC converter for Gsm850/900/1800/1900 MHz systems
-
Jun
-
A. Tombak et al., "A flip-chip silicon IPMOS power amplifier and a DC/DC converter for Gsm850/900/1800/1900 MHz systems", in IEEE Radio Frequency Integrated Circuits (RFIC) Symp. Dig., Jun. 2007, pp. 79.83-79.83.
-
(2007)
IEEE Radio Frequency Integrated Circuits (RFIC) Symp. Dig
-
-
Tombak, A.1
-
7
-
-
0034295748
-
A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications
-
Oct
-
Y. Tan et al., "A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications", IEEE J. Solid-State Circuits, vol. 35, no. 10, pp. 1481-5, Oct. 2000.
-
(2000)
IEEE J. Solid-State Circuits
, vol.35
, Issue.10
, pp. 1481-1485
-
-
Tan, Y.1
-
8
-
-
57849123589
-
A fully integrated, silicon bipolar RF power amplifier for GSM, operating from a single 3 V supply voltage
-
Oct
-
H. Visser et al., "A fully integrated, silicon bipolar RF power amplifier for GSM, operating from a single 3 V supply voltage", in Proc. 28th European Microwave Conf., Oct. 1998, vol. 2, pp. 656-658.
-
(1998)
Proc. 28th European Microwave Conf
, vol.2
, pp. 656-658
-
-
Visser, H.1
-
9
-
-
0033694266
-
A monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHz
-
Jun
-
W. Simbiirger et al., "A monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHz", in IEEE MTT-S Dig., Jun. 2000, vol. 2, pp. 853-6.
-
(2000)
IEEE MTT-S Dig
, vol.2
, pp. 853-856
-
-
Simbiirger, W.1
-
10
-
-
0036073144
-
High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology
-
Jun
-
E. Glass et al., "High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology", in IEEE MTT-S Dig., Jun. 2002, pp. 656-658.
-
(2002)
IEEE MTT-S Dig
, pp. 656-658
-
-
Glass, E.1
-
11
-
-
50949088180
-
A load-insensitive quad-band GSM/EDGE SiGeC-bipolar power amplifier with a highly efficient low-power mode
-
Jun
-
W. Bakalski et al., "A load-insensitive quad-band GSM/EDGE SiGeC-bipolar power amplifier with a highly efficient low-power mode", in IEEE IEEE Radio and Wireless Symp. Dig., Jun. 2008, pp. 203-206.
-
(2008)
IEEE IEEE Radio and Wireless Symp. Dig
, pp. 203-206
-
-
Bakalski, W.1
-
12
-
-
0033366070
-
A 1.9 GHz, 1-W CMOS class-E power amplifier for wireless communications
-
Jul
-
K. C. Tsai et al., "A 1.9 GHz, 1-W CMOS class-E power amplifier for wireless communications", IEEE J. Solid-State Circuits, vol. 34, no. 7, pp. 962-9, Jul. 1999.
-
(1999)
IEEE J. Solid-State Circuits
, vol.34
, Issue.7
, pp. 962-969
-
-
Tsai, K.C.1
-
13
-
-
0033701278
-
-
C. Yooetal., A common-gate switched, 0.9 W class-E power amplifier with 41% PAE in 0.25 mm CMOS, in Proc. VLSI Symp., Jun. 2000, pp. 56-7.
-
C. Yooetal., "A common-gate switched, 0.9 W class-E power amplifier with 41% PAE in 0.25 mm CMOS", in Proc. VLSI Symp., Jun. 2000, pp. 56-7.
-
-
-
-
14
-
-
0035063431
-
A 1.5 W class-F RF power amplifier in 0.2 mm CMOS technology
-
Feb
-
T. C. Kuo et al., "A 1.5 W class-F RF power amplifier in 0.2 mm CMOS technology", in IEEE ISSCC Dig., Feb. 2001, pp. 154-5.
-
(2001)
IEEE ISSCC Dig
, pp. 154-155
-
-
Kuo, T.C.1
-
15
-
-
0035689770
-
A 1 W CMOS power amplifier for GSM-1800 with 55% PAE
-
May
-
C. Fallesen et al., "A 1 W CMOS power amplifier for GSM-1800 with 55% PAE", in IEEE Microwave Theory and Technique Symp. Dig., May 2001. vol. 2, pp. 911-914.
-
(2001)
IEEE Microwave Theory and Technique Symp. Dig
, vol.2
, pp. 911-914
-
-
Fallesen, C.1
-
16
-
-
0034829269
-
A fully 2.4-GHz, 2.2-W, 2-V fully-integrated CMOS circular-geometry active-transformer power amplifier
-
May
-
I. Aoki et al., "A fully 2.4-GHz, 2.2-W, 2-V fully-integrated CMOS circular-geometry active-transformer power amplifier", in Proc. IEEE Custom Integrated Circuits Conf. (CICC), May 2001, pp. 57-60.
-
(2001)
Proc. IEEE Custom Integrated Circuits Conf. (CICC)
, pp. 57-60
-
-
Aoki, I.1
-
17
-
-
0036503834
-
Fully-integrated CMOS power amplifier design using the distributed active transformer architecture
-
Mar
-
I. Aoki et al., "Fully-integrated CMOS power amplifier design using the distributed active transformer architecture", IEEE J. Solid-State Circuits, vol. 37, no. 3, pp. 371-83, Mar. 2002.
-
(2002)
IEEE J. Solid-State Circuits
, vol.37
, Issue.3
, pp. 371-383
-
-
Aoki, I.1
-
18
-
-
0008851540
-
Distributed active transformer: A new power combining and impedance transformation techniques
-
Jan
-
I. Aoki et al., "Distributed active transformer: A new power combining and impedance transformation techniques", IEEE Trans. Microw. Theory Tech., vol. 50, no. 1, pp. 316-32, Jan. 2002.
-
(2002)
IEEE Trans. Microw. Theory Tech
, vol.50
, Issue.1
, pp. 316-332
-
-
Aoki, I.1
-
19
-
-
0043092022
-
A fully-integrated 1.8 V, 2.8 W, 1.9 GHz, CMOS power amplifier
-
Jun
-
I. Aoki et al., "A fully-integrated 1.8 V, 2.8 W, 1.9 GHz, CMOS power amplifier", in Proc. IEEE RFIC Symp., Jun. 2003, pp. 199-202.
-
(2003)
Proc. IEEE RFIC Symp
, pp. 199-202
-
-
Aoki, I.1
-
20
-
-
27644507279
-
Fully-integrated RF CMOS power amplifier-A prelude to full radio integration
-
Jun
-
A. Hajimiri, "Fully-integrated RF CMOS power amplifier-A prelude to full radio integration", in Proc. IEEE RFIC Symp., Jun. 2005, pp. 439-442.
-
(2005)
Proc. IEEE RFIC Symp
, pp. 439-442
-
-
Hajimiri, A.1
-
21
-
-
33845602037
-
A +31.5 dBm CMOS RF doherty power amplifier for wireless communications
-
Dec
-
N. Wongkomet et al., "A +31.5 dBm CMOS RF doherty power amplifier for wireless communications", IEEE J. Solid-State Circuits, vol. 41, pp. 2852-2859, Dec. 2006.
-
(2006)
IEEE J. Solid-State Circuits
, vol.41
, pp. 2852-2859
-
-
Wongkomet, N.1
-
22
-
-
34247647636
-
A CMOS RF power amplifier using an off-chip transmission line transformer with 62% PAE
-
May
-
J. Jang et al., "A CMOS RF power amplifier using an off-chip transmission line transformer with 62% PAE", IEEE Microw. Wireless Compon. Lett., vol. 17, pp. 385-387, May 2007.
-
(2007)
IEEE Microw. Wireless Compon. Lett
, vol.17
, pp. 385-387
-
-
Jang, J.1
-
23
-
-
42649109036
-
Power-combining transformer techniques for fullyintegrated CMOS power amplifiers
-
May
-
K. H. An et al., "Power-combining transformer techniques for fullyintegrated CMOS power amplifiers", IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1064-1075, May 2008.
-
(2008)
IEEE J. Solid-State Circuits
, vol.43
, Issue.5
, pp. 1064-1075
-
-
An, K.H.1
-
24
-
-
40149102403
-
Fully-integrated CMOS power amplifier with efficiency enhancement at power back-off
-
Mar
-
G. Liu et al., "Fully-integrated CMOS power amplifier with efficiency enhancement at power back-off", IEEE J. Solid-State Circuits, vol. 43, no. 3, pp. 600-609, Mar. 2008.
-
(2008)
IEEE J. Solid-State Circuits
, vol.43
, Issue.3
, pp. 600-609
-
-
Liu, G.1
-
25
-
-
0035247680
-
Design and optimization of CMOS RF power amplifiers
-
Feb
-
R. Gupta el al., "Design and optimization of CMOS RF power amplifiers", IEEE J. Solid-Slate Circuits, vol. 36, no. 2, pp. 166-75, Feb. 2001.
-
(2001)
IEEE J. Solid-Slate Circuits
, vol.36
, Issue.2
, pp. 166-175
-
-
Gupta, R.1
el al2
-
26
-
-
0033678284
-
RF power amplifier integration in CMOS technology
-
Jun
-
Y. J. E. Chen et al., "RF power amplifier integration in CMOS technology." in IEEE MTT-S Dig., Jun. 2000, vol. 1, pp. 545-548.
-
(2000)
IEEE MTT-S Dig
, vol.1
, pp. 545-548
-
-
Chen, Y.J.E.1
-
27
-
-
0000793139
-
Cramming more components onto integrated circuits
-
Apr
-
G. E. Moore, "Cramming more components onto integrated circuits", Electronics, vol. 38, no. 8, Apr. 1965.
-
(1965)
Electronics
, vol.38
, Issue.8
-
-
Moore, G.E.1
-
28
-
-
0031122158
-
CMOS scaling into the nanometer regime
-
Apr
-
Y. Taur et al., "CMOS scaling into the nanometer regime", Proc. IEEE, vol. 85, no. 4, pp. 486-504, Apr. 1997.
-
(1997)
Proc. IEEE
, vol.85
, Issue.4
, pp. 486-504
-
-
Taur, Y.1
-
29
-
-
0031122029
-
Overview of nanoelectronic devices
-
Apr
-
D. Goldhaber-Gordon et al., "Overview of nanoelectronic devices", Proc. IEEE, vol. 85, no. 4, pp. 521-540, Apr. 1997.
-
(1997)
Proc. IEEE
, vol.85
, Issue.4
, pp. 521-540
-
-
Goldhaber-Gordon, D.1
-
30
-
-
0025464151
-
Projecting gate oxide reliability and optimizing reliability screens
-
Jun
-
R. Moazzami et al., "Projecting gate oxide reliability and optimizing reliability screens", IEEE Trans. Electron Devices, vol. 37, pp. 1643-1650, Jun. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.37
, pp. 1643-1650
-
-
Moazzami, R.1
-
31
-
-
0031163704
-
Field and temperature acceleration model for time-dependent dielectric breakdown
-
Jun
-
K. Sakakibara et al., "Field and temperature acceleration model for time-dependent dielectric breakdown", IEEE Trans. Electron Devices, vol. 44, pp. 986-992, Jun. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 986-992
-
-
Sakakibara, K.1
-
32
-
-
0032741335
-
Field and temperature acceleration model for time-dependent dielectric breakdown
-
Jan
-
M. Kimura, "Field and temperature acceleration model for time-dependent dielectric breakdown", IEEE Trans. Electron Devices, vol. 46. pp. 220-229, Jan. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 220-229
-
-
Kimura, M.1
-
33
-
-
57849097492
-
-
Sonnet User Manuals, Ver. 11. Sonnet Software Inc., 2008.
-
Sonnet User Manuals, Ver. 11. Sonnet Software Inc., 2008.
-
-
-
|