A 2.4-GHz, 2.2-W, 2-V fully-integrated CMOS circular-geometry active-transformer power amplifier

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2001, Pages 57-60

  Aoki, I ^a   Kee, S D ^a   Rutledge, D ^a   Hajimiri, A ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC NETWORK TOPOLOGY; ELECTRIC WIRE; ELECTRON DEVICE MANUFACTURE; HARMONIC ANALYSIS; IMPEDANCE MATCHING (ELECTRIC); INDUCTANCE; MAGNETIC COUPLINGS; MOSFET DEVICES;

FULLY INTEGRATED CIRCULAR GEOMETRY POWER AMPLIFIER; HARMONIC SUPPRESSION; ON-CHIP CIRCULAR GEOMETRY ACTIVE-TRANSFORMER; PUSH-PULL LOW-VOLTAGE AMPLIFIER; VIRTUAL AC GROUNDS;

POWER AMPLIFIERS;

EID: 0034829269     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. A 1.9 GHz, 1-W CMOS class-E power amplifier for wireless communications
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4. A monolithic 2.5V, 1W silicon bipolar power amplifier with 55% PAE at 1.9GHz
5. A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications
6. High power-added efficiency MMIC amplifier for 2.4 GHz wireless communications
7. The modeling, characterization, and design of momolithic inductors for silicon RF IC's
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9. odd switching amplifier class