A fully integrated, silicon bipolar RF power amplifier for GSM, operating from a single 3 volt supply voltage

1998 28th European Microwave Conference, EuMC 1998

Volumn 2, Issue , 1998, Pages 656-658

  Visser, Henk ^a   Van Der Last, Rudolf ^a   Fric, Tomas ^a   Breunisse, Rainier ^a   Akhnoukh, Atef ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

A-CERAMICS; EXTERNAL COMPONENTS; FULLY INTEGRATED; LOW COSTS; POWER SUPPLY; RF POWER AMPLIFIERS; SILICON BIPOLAR; SUPPLY VOLTAGES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 57849123589     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1998.338232     Document Type: Conference Paper

References (5)

1. W.Simburger, et al., 1.3W 1.9ghz and 1W 2.4ghz power amplifier MMIC in silicon, Electronics Letters, 12th September 1996, Vol. 32 No. 19
2. F. van Rijs, et al., High gain, high efficiency, low voltage, medium power Si-bipolar transistor suitable for integration, RFIC Symposium, Denver, USA 1997, Technical area of interest: Highly integrated RFICs in Si-Technology
3. [31 J. Griffiths and V. Sadhir, A low cost 3.6V single-supply GaAs power amplifier ic for the 1.9ghz DECT system. IEEE MrT-S Int. Microwave Symposium, p. 535, 1996
4. Wong, S.L. et al., A 1W 830mhz Monolithic BiCMOS Power Amplifier, ISSCC Tech. Dig., pp. 52-53, 1996
5. W.Abey, An E-Mode GaAs FET Power Amplifier MMIC for GSM phones, 1997 IEEE MTT-S Digist, page 1315