A highly integrated quad-band GSM TX-front-end-module

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 280-283

  DiCarlo, P ^a   Boerman, S ^a   Burton, R ^a   Chung, H C ^a   Evans, D ^a   Gerard, M ^a   Gering, J ^a   Khayo, I ^a   Lagrandier, L ^a   Lalicevic, I ^a   Reginella, P ^a   Sprinkle, S ^a   Tkachenko, Y ^a  

^a SKYWORKS SOLUTIONS INC   (United States)

Author keywords

Front end modules; InGaP HBT technology; Power amplifiers; Power added efficiency; Ruggedness

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIGITAL FILTERS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SWITCHES;

FRONT-END MODULES; INDIUM GALLIUM PHOSPHIDE HETEROJUNCTION BIPOLAR TRANSISTOR TECHNOLOGY; POWER-ADDED EFFICIENCY;

POWER AMPLIFIERS;

EID: 0346935147     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252411     Document Type: Conference Paper

References (6)

1. R. Jos, "Technology developments driving evolution of cellular phone power amplifiers to integrated RF front-end modules," IEEE Journal of Solid-State Circuits, No. 9, Vol. 36, Sep. 2001, pp. 1382-1389.
2. D. Wu, M. Frank, N. Hendin, and S. Yajima, "Radio front-end module technologies and design for multiband/mode cellular handsets," IMS-2003 short course digest on "RF FEM's for cellular phone and WLAN applications," 2003.
3. J. Gering, S. Boerman, R. Burton, P. DiCarlo, M. Gerard, J. Hu, P. Reginella, S. Sprinkle, Y. Tkachenko, C. Wei, and P. Zampardi, "A Quad-band InGaP HBT PA module with 60% GSM PAE and 35:1 open loop ruggedness," to be published in 2003 IEEE Topical Workshop on PA's for Wireless Communications Digest.
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