A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 10, 2000, Pages 1481-1486

  Tan, Yue ^a   Kumar, Mahender ^a   Sin, Johnny K O ^a   Shi, Longxing ^a   Lau, Jack ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; GAIN MEASUREMENT; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; PERSONAL COMMUNICATION SYSTEMS; SILICON ON INSULATOR TECHNOLOGY; TRANSCEIVERS; WIRELESS TELECOMMUNICATION SYSTEMS;

FRONT END CIRCUITS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; INTEGRATED POWER AMPLIFIER; ON CHIP INPUT MATCHING NETWORKS; ON CHIP OUTPUT MATCHING NETWORKS; POWER ADDED EFFICIENCY; SINGLE CHIP WIRELESS TRANSCEIVER;

POWER AMPLIFIERS;

EID: 0034295748     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.871326     Document Type: Article

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