-
1
-
-
0028078942
-
A high performance 2.4 GHz transceiver chip-set for high volume commercial applications
-
San Diego, CA, May
-
B. Khabbaz, A. Douglas, J. DeAngelis, L. Hongsmatip, V. Pelliccia, W. Fahey, and G. Dawe, "A high performance 2.4 GHz transceiver chip-set for high volume commercial applications," in Proc. IEEE 1994 Microwave and Millimeter-Wave Monolithic Circuits Symp., San Diego, CA, May 1994, pp. 11-14.
-
(1994)
Proc. IEEE 1994 Microwave and Millimeter-Wave Monolithic Circuits Symp.
, pp. 11-14
-
-
Khabbaz, B.1
Douglas, A.2
DeAngelis, J.3
Hongsmatip, L.4
Pelliccia, V.5
Fahey, W.6
Dawe, G.7
-
2
-
-
0028064079
-
A GaAs transceiver for 2.45 GHz wireless commercial products
-
San Diego, CA, May
-
T. Apel, E. Creviston, S. Ludvik, L. Quist, and B. Tuch, "A GaAs transceiver for 2.45 GHz wireless commercial products," in Proc. IEEE 1994 Microwave and Millimeter-Wave Monolithic Circuits Symp., San Diego, CA, May 1994, pp. 15-18.
-
(1994)
Proc. IEEE 1994 Microwave and Millimeter-Wave Monolithic Circuits Symp.
, pp. 15-18
-
-
Apel, T.1
Creviston, E.2
Ludvik, S.3
Quist, L.4
Tuch, B.5
-
3
-
-
0027961843
-
A single chip MMIC transceiver for 2.4 GHz spread spectrum communication
-
San Diego, CA, May
-
M. S. Wang, M. Carriere, P. O'Sullivan, and B. Maoz, "A single chip MMIC transceiver for 2.4 GHz spread spectrum communication," in Proc. IEEE 1994 Microwave and Millimeter-Wave Monolithic Circuits Symp., San Diego, CA, May 1994, pp. 19-22.
-
(1994)
Proc. IEEE 1994 Microwave and Millimeter-Wave Monolithic Circuits Symp.
, pp. 19-22
-
-
Wang, M.S.1
Carriere, M.2
O'Sullivan, P.3
Maoz, B.4
-
4
-
-
0028463381
-
GaAs RF IC's target 2.4 GHz frequency band
-
July
-
M. Williams, F. Bonn, C. Gong, and T. Quach, "GaAs RF IC's target 2.4 GHz frequency band," Microwaves RF, pp. 111-117, July 1994.
-
(1994)
Microwaves RF
, pp. 111-117
-
-
Williams, M.1
Bonn, F.2
Gong, C.3
Quach, T.4
-
5
-
-
85063336187
-
New horizons for the microwave business in Europe
-
Madrid, Spain, Sept.
-
E. Pettenpaul, "New horizons for the microwave business in Europe," in Proc. Eur. Microwave Conf., Madrid, Spain, Sept. 1993, pp. 1-5.
-
(1993)
Proc. Eur. Microwave Conf.
, pp. 1-5
-
-
Pettenpaul, E.1
-
6
-
-
0020878580
-
A theory for the prediction of GaAs FET load-pull power contours
-
Boston, MA
-
S. C. Cripps, "A theory for the prediction of GaAs FET load-pull power contours," in Proc. IEEE 1983 Microwave Theory and Techniques Symp., Boston, MA, 1983, pp. 221-223.
-
(1983)
Proc. IEEE 1983 Microwave Theory and Techniques Symp.
, pp. 221-223
-
-
Cripps, S.C.1
-
7
-
-
34648850966
-
Design of high power-added efficiency FET amplifiers with very low drain bias voltages for use in mobile telephones at 1.7 GHz
-
Madrid, Spain, Sept.
-
S. Dietsche, C. Duvanaud, G. Pataut, and J. Obregon, "Design of high power-added efficiency FET amplifiers with very low drain bias voltages for use in mobile telephones at 1.7 GHz," in Proc. Eur. Microwave Conf., Madrid, Spain, Sept. 1993, pp. 252-254.
-
(1993)
Proc. Eur. Microwave Conf.
, pp. 252-254
-
-
Dietsche, S.1
Duvanaud, C.2
Pataut, G.3
Obregon, J.4
-
8
-
-
0009462571
-
Graphical method spots power-FET operating points
-
Feb.
-
J. Obregon, E. Ngoya, M. Campovecchio, and M. Camiade, "Graphical method spots power-FET operating points," Microwaves RF, pp. 91-96, Feb. 1989.
-
(1989)
Microwaves RF
, pp. 91-96
-
-
Obregon, J.1
Ngoya, E.2
Campovecchio, M.3
Camiade, M.4
-
9
-
-
0019633392
-
High efficiency microwave FET power amplifiers
-
Nov.
-
F. N. Sechi, "High efficiency microwave FET power amplifiers," Microwave J., pp. 59-66, Nov. 1981.
-
(1981)
Microwave J.
, pp. 59-66
-
-
Sechi, F.N.1
-
10
-
-
0023252935
-
Harmonic reaction amplifier - A novel high-efficiency and high-power amplifier
-
S. Nishiki and T. Nojima, "Harmonic reaction amplifier - A novel high-efficiency and high-power amplifier," in IEEE MTT-S Dig., 1987, pp. 963-966.
-
(1987)
IEEE MTT-S Dig.
, pp. 963-966
-
-
Nishiki, S.1
Nojima, T.2
-
11
-
-
0029711599
-
AlGaAs/InGaAs power P-HEMT's for high-efficiency, low-voltage portable applications
-
M. J. Martinez, E. Schirmann, M. Durlam, J.-H. Huang, S. Tehrani, N. Cody, T. Driver, and K. Barkley, "AlGaAs/InGaAs power P-HEMT's for high-efficiency, low-voltage portable applications," in IEEE MTT-S Dig., 1996, pp. 551-553.
-
(1996)
IEEE MTT-S Dig.
, pp. 551-553
-
-
Martinez, M.J.1
Schirmann, E.2
Durlam, M.3
Huang, J.-H.4
Tehrani, S.5
Cody, N.6
Driver, T.7
Barkley, K.8
-
12
-
-
0030107112
-
A 90% power-added-efficiency GalnP/GaAs HBT for L-band radar and mobile communication systems
-
A. Mallet, D. Floriot, J. P. Viaud, F. Blache, J. M. Nebus, and S. Delage, "A 90% power-added-efficiency GalnP/GaAs HBT for L-band radar and mobile communication systems," IEEE Microwave Guided Wave Lett., vol. 6, no. 3, pp. 132-134, 1996.
-
(1996)
IEEE Microwave Guided Wave Lett.
, vol.6
, Issue.3
, pp. 132-134
-
-
Mallet, A.1
Floriot, D.2
Viaud, J.P.3
Blache, F.4
Nebus, J.M.5
Delage, S.6
-
13
-
-
85012828986
-
A pulsed S-parameters measurement setup for the nonlinear characterization of FET's and bipolar power transistors
-
Madrid, Spain, Sept.
-
J. P. Teyssier, M. Campovecchio, C. Sommet, J. Portilla, and R. Quere, "A pulsed S-parameters measurement setup for the nonlinear characterization of FET's and bipolar power transistors," in Proc. Eur. Microwave Conf., Madrid, Spain, Sept. 1993, pp. 489-493.
-
(1993)
Proc. Eur. Microwave Conf.
, pp. 489-493
-
-
Teyssier, J.P.1
Campovecchio, M.2
Sommet, C.3
Portilla, J.4
Quere, R.5
-
14
-
-
0030107039
-
Extracting a bias-dependent large signal MESFET model from I/V measurements
-
Mar.
-
T. Fernández, Y. Newport, J. M. Zamanillo, A. Tazón, and A. Mediavilla, "Extracting a bias-dependent large signal MESFET model from I/V measurements," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 372-378, Mar. 1996.
-
(1996)
IEEE Trans. Microwave Theory Tech.
, vol.44
, pp. 372-378
-
-
Fernández, T.1
Newport, Y.2
Zamanillo, J.M.3
Tazón, A.4
Mediavilla, A.5
|