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Volumn 34, Issue 1, 1999, Pages 120-123

High power-added efficiency MMIC amplifier for 2.4 GHz wireless communications

Author keywords

Amplifier; Efficiency; Monolithic microwave integrated circuit (MMIC)

Indexed keywords

ELECTRIC POWER SUPPLIES TO APPARATUS; INTEGRATED CIRCUIT MANUFACTURE; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; TRANSMITTERS; WIRELESS TELECOMMUNICATION SYSTEMS;

EID: 0032686167     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.736666     Document Type: Article
Times cited : (21)

References (14)
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    • Cripps, S.C.1
  • 7
    • 34648850966 scopus 로고
    • Design of high power-added efficiency FET amplifiers with very low drain bias voltages for use in mobile telephones at 1.7 GHz
    • Madrid, Spain, Sept.
    • S. Dietsche, C. Duvanaud, G. Pataut, and J. Obregon, "Design of high power-added efficiency FET amplifiers with very low drain bias voltages for use in mobile telephones at 1.7 GHz," in Proc. Eur. Microwave Conf., Madrid, Spain, Sept. 1993, pp. 252-254.
    • (1993) Proc. Eur. Microwave Conf. , pp. 252-254
    • Dietsche, S.1    Duvanaud, C.2    Pataut, G.3    Obregon, J.4
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    • (1987) IEEE MTT-S Dig. , pp. 963-966
    • Nishiki, S.1    Nojima, T.2
  • 12
    • 0030107112 scopus 로고    scopus 로고
    • A 90% power-added-efficiency GalnP/GaAs HBT for L-band radar and mobile communication systems
    • A. Mallet, D. Floriot, J. P. Viaud, F. Blache, J. M. Nebus, and S. Delage, "A 90% power-added-efficiency GalnP/GaAs HBT for L-band radar and mobile communication systems," IEEE Microwave Guided Wave Lett., vol. 6, no. 3, pp. 132-134, 1996.
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.