Monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2000, Pages 853-856

  Simbuerger, Werner ^a   Heinz, Alexander ^a   Wohlmuth, Hans Dieter ^a   Boeck, Josef ^a   Aufinger, Klaus ^a   Rest, Mirjana ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC POWER AMPLIFIER; ON CHIP TRANSFORMERS; POWER ADDED EFFICIENCY; SILICON BIPOLAR POWER AMPLIFIER;

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; ELECTRIC INSTRUMENT TRANSFORMERS; ELECTRIC POWER SUPPLIES TO APPARATUS; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; TELEPHONE SETS;

POWER AMPLIFIERS;

EID: 0033694266     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

1. Yoshida, I. et al., "A 3.6V 4W 0.2cc Si Power-MOS-Amplifier Module for GSM Handset Phones," in ISSCC98 Digest of Technical Papers, pp. 50-51, 1998 IEEE International Solid-state Circuits Conference, February 1998.
2. Parkhurst, R. et al., "Silicon Bipolar 3 V Power Amplifier for GSM900/GSM1800 Handsets," in 1998 Bipolar/BiCMOS Circuits and Technology Meeting, (Minneapolis), pp. 117-19, 27-29 Sept. 1998.
3. Su, D. and McFarland, W., "A 2.5 V, 1 W Monolithic CMOS RF Power Amplifier," in IEEE 1997 Custom Integrated Circuits Conference, (Santa Clara), pp. 189-92, 5-8 May 1997.
4. Böck, J. et al., "A 50GHz Implanted Base Silicon Bipolar Technology with 35GHz Static Fkequency Divider," in Symposium on VLSI Technology, Digest of Technicd Papers, pp. 108-109, 1996.
5. Rickelt, M. and Rein, H.-M., "Impact-Ionization Induced Instabilities in High-Speed Bipolar Transistors and their Influence on the Maximum Usable Output Voltage," in Bipolar/BiCMOS Circuits and Technology Meeting, (Minneapolis), pp. 54-57, IEEE, September 26-28 1999.
6. Simbürger, W. et al., "A Monolithic Transformer Coupled 5 W Silicon Power Amplifier with 59 % PAE at 0.9 GHz," IEEE Journal of Solid-state Circuits, vol. 34, pp. 1881-92, December 1999.