High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 557-560

  Glass, Elizabeth ^a   Shields, Michael ^a   Reyes, Adolfo ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER SUPPLIES TO APPARATUS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

ON CHIP ATTENUATOR; QUASI ENHANCEMENT MODE;

POWER AMPLIFIERS;

EID: 0036073144     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. E-PHEMT, single supply, high efficient power amplifiers for GSM and DCS applications
2. A single supply high performance PA MMIC for GSM handsets using quasi-enhancement mode PHEMT
3. Application of enhancement mode FET technology for wireless subscriber transmit/receive circuits
4. A single supply device technology for wireless applications
5. A true enhancement mode device technology suitable for dual mode dual band power amplifier applications