A 1.5W class-F RF power amplifier in 0.2μm CMOS technology

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2001, Pages 154-155+442

  Kuo, T C ^a   Lusignan, B B ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; FOURIER TRANSFORMS; GATES (TRANSISTOR); SEMICONDUCTOR DIODES; SWITCHING CIRCUITS;

GATE VOLTAGE; KNEE VOLTAGE; LOW OXIDE BREAKDOWN VOLTAGE;

POWER AMPLIFIERS;

EID: 0035063431     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A 2.5-V 1-W monolithic CMOS RF power amplifier
2. A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications
3. A common-gate switched, 0.9W class-E power amplifier with 41% PAE in 0.25μm CMOS
4. Simple reconciliation MOSFET model valid in all regions
5. High efficiency single and push-pull power amplifiers