Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2169-2174

  Gaillard, N ^a,b   Mariolle, D ^c   Bertin, F ^c   Gros Jean, M ^a   Proust, M ^a   Bsiesy, A ^b,d   Bajolet, A ^a   Chhun, S ^e   Djebbouri, M ^d,f  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

^c CEA LETI   (France)

^d UNIV GRENOBLE ALPES   (France)

^e NXP SEMICONDUCTORS   (Netherlands)

^f LIPHY   (France)

Author keywords

EBSD; Grain crystallographic orientation; Kelvin probe force microscope; MOS and MIM capacitors; TiN post treatments; Work function

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; ELECTRON SCATTERING; MOS CAPACITORS;

EBSD; GRAIN CRYSTALLOGRAPHIC ORIENTATION; KELVIN PROBE FORCE MICROSCOPES; MOS AND MIM CAPACITORS; TIN POST-TREATMENTS; WORK FUNCTION;

ELECTRODES;

EID: 33751225993     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.09.028     Document Type: Article

References (25)

1. G.S. Lujan, et al., in: Proceedings of the 32nd ESSDERC 583, 2002.
2. Alshareef H.N., et al. Phys. Lett. 87 (2005) 052109
3. Yagashita A., et al. IEEE Trans. Electron Dev. 48 (2001) 1604
4. Kelvin L. Philos. Mag. 46 (1898)
5. Y. Rosenwaks, et al., Direct measurement of semiconductors surface states parameters using Kelvin probe force microscopy, 2003.
6. Sugimura H., et al. JVST A 22 (2004) 1428-1432
7. Tanem B.S., et al. Corros. Sci. 47 (2005) 1506
8. Sugimura H., et al. Appl. Phys. Lett. 80 (2002) 1459-1461
9. Mulliken R.S. J. Chem. Phys. 2 (1934) 782
10. Michaelson H.B. J. Res. Develop. 22 1 (1978)
11. Westlinder J., et al. Microelectron. Eng. 75 (2004) 389
12. J.K. Schaeffer, et al., as discussed at the 2005 IEEE SISC, Arlington, VA, USA.
13. Smoluchowski R. Phys. Rev. 60 (1941) 661-674
14. Eastment R.M., et al. J. Phys. F: Metal Phys. (1973) 1738-1745
15. Chelvayohan M., et al. J. Phys. C: Solid State Phys. 15 (1982) 2305
16. Gartland P.O., et al. Phys. Rev. Lett. 28 (1972) 738
17. Hobbs C., et al. IEEE Trans. Electron Dev. 51 6 (2004) 971
18. Ren C., et al. IEEE Electron Dev. Lett. 25 3 (2004) 123
19. Schmutz P., et al. J. Electrochem. Soc. 145 (1998) 7
20. Vatel O., et al. J. Appl. Phys. 77 (1995) 2358
21. Li W., et al. Surf. Rev. Lett. 11 (2004) 173
22. Li W., et al. J. Chem. Phys. 122 (2005) 064708
23. N. Gaillard, et al., as discussed at the 2005 IEEE SISC, Arlington,VA, USA.
24. Choi K., et al. Thin Solid Films 486 (2004) 141
25. A. Bajolet, et al., as discussed at the 2006MAM conference, O9.03, Grenoble, France.