Thermal and electrical properties of 5-nm-thick TaN film prepared by atomic layer deposition using a pentakis(ethylmethylamino)tantalum precursor for copper metallization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 12, 2006, Pages 9072-9074

  Bae, Nam Jin ^a,b   Na, Kyoung Il ^a   Cho, Hyun Ick ^a   Park, Ki Yeol ^a   Boo, Sung Eun ^a,b   Bae, Jeung Ho ^c   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b J C Tech Incorporated   (South Korea)

^c Uiduk University   (South Korea)

Author keywords

Atomic layer deposition (ALD); Cu diffusion barrier; Tantalum nitride (TaN)

Indexed keywords

ATOMIC LAYER DEPOSITION; COPPER; ELECTRIC PROPERTIES; METALLIZING; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION;

CAPACITANCE-VOLTAGE; PENTAKIS(ETHYLMETHYLAMINO)TANTALUM (PEMAT); UNIFORM INTERFACE;

TANTALUM COMPOUNDS;

EID: 34547837260     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.9072     Document Type: Article

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