Thermal annealing effects on a representative high-k/metal film stack

Semiconductor Science and Technology

Volumn 21, Issue 10, 2006, Pages 1437-1440

  Hussain, M M ^a   Quevedo Lopez, M A ^a,b   Alshareef, H N ^b   Wen, H C ^a   Larison, D ^c   Gnade, B ^d   El Bouanani, M ^e  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c Advanced Technology Development Facility   (United States)

^d The University of Texas at Dallas   (United States)

^e Center for Advanced Research and Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; REFRACTIVE INDEX; SILICA; TITANIUM NITRIDE;

ATOMIC LAYER DEPOSITION (ALD); GATE LEAKAGE; SEMICONDUCTOR INDUSTRY; SHEET RESISTANCE;

METALLIC FILMS;

EID: 33748865991     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/10/012     Document Type: Article

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