Temperature dependence of GaN high breakdown voltage diode rectifiers

Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 613-617

  Chyi, J I ^a   Lee, C M ^a   Chuo, C C ^a   Cao, X A ^b   Dang, G T ^b   Zhang, A P ^b   Ren, F ^b   Pearton, S J ^b   Chu, S N G ^c   Wilson, R G ^d  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b University of Florida   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d Lucent Technologies ^*

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC RECTIFIERS; EPITAXIAL GROWTH; INTEGRATED CIRCUIT MANUFACTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

AVALANCHE BREAKDOWN; BREAKDOWN VOLTAGE; FORWARD TURN ON VOLTAGE; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 0033907597     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00183-5     Document Type: Article

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