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Journal of Non-Crystalline Solids

Volumn 245, Issue 1-3, 1999, Pages 73-78

Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures

(5) Chaneliere, C a Autran, J L a Four, S a,b Devine, R A B b Balland, B a

a UNIVERSITÉ DE LYON (France)

b ORANGE LABS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS FILMS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SILICA; SILICON NITRIDE; TANTALUM COMPOUNDS;

FOWLER-NORDHEIM TUNNELING; KIRCHHOFF VOLTAGE LAW; POOLE-FRENKEL EFFECT; TANTALUM PEROXIDE;

CAPACITORS;

EID: 0032657316 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00873-4 Document Type: Article

Times cited : (11)

References (18)

1
- 0005588197
- T. Kaga, M. Ohkura, F. Murai, N. Yokoyama, E. Takeda, J. Vac. Sci. Technol. B 13 (1995) 2329.
- (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 2329
- Kaga, T.¹ Ohkura, M.² Murai, F.³ Yokoyama, N.⁴ Takeda, E.⁵

2
- 0031140151
- K.S. Tang, W.S. Lau, G.S. Samudra, IEEE Circuits Devices Mag. 13 (1997) 27.
- (1997) IEEE Circuits Devices Mag. , vol.13 , pp. 27
- Tang, K.S.¹ Lau, W.S.² Samudra, G.S.³

3
- 0004838740
- S.O. Kim, H.J. Kim, J. Vac. Sci. Technol. B 12 (1994) 3006.
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 3006
- Kim, S.O.¹ Kim, H.J.²

4
- 0031236156
- J.L. Autran, R.A.B. Devine, C. Chaneliere, B. Balland, IEEE Electron Device Lett. 18 (1997) 447.
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 447
- Autran, J.L.¹ Devine, R.A.B.² Chaneliere, C.³ Balland, B.⁴

5
- 0032072478
- C. Chaneliere, J.L. Autran, R.A.B. Devine, B. Balland, Mater. Sci. Eng. R 22 (1998) 269.
- (1998) Mater. Sci. Eng. R , vol.22 , pp. 269
- Chaneliere, C.¹ Autran, J.L.² Devine, R.A.B.³ Balland, B.⁴

6
- 0027609883
- S. Kamiyama, P.Y. Lesaicherre, H. Suzuki, A. Sakai, I. Nishiyama, A. Ishitani, J. Electrochem. Soc. 140 (1993) 1617.
- (1993) J. Electrochem. Soc. , vol.140 , pp. 1617
- Kamiyama, S.¹ Lesaicherre, P.Y.² Suzuki, H.³ Sakai, A.⁴ Nishiyama, I.⁵ Ishitani, A.⁶

7
- 0028732660
- S.O. Kim, H.J. Kim, Thin Solid Films 253 (1994) 435.
- (1994) Thin Solid Films , vol.253 , pp. 435
- Kim, S.O.¹ Kim, H.J.²

8
- 36549093766
- Y. Nishioka, H. Shinriki, K. Mukai, J. Appl. Phys. 61 (1987) 2335.
- (1987) J. Appl. Phys. , vol.61 , pp. 2335
- Nishioka, Y.¹ Shinriki, H.² Mukai, K.³

9
- 0012491919
- S. Banerjee, B. Shen, I. Chen, J. Bohlman, G. Brown, R. Doering, J. Appl. Phys. 65 (1989) 1140.
- (1989) J. Appl. Phys. , vol.65 , pp. 1140
- Banerjee, S.¹ Shen, B.² Chen, I.³ Bohlman, J.⁴ Brown, G.⁵ Doering, R.⁶

10
- 0000449251
- C. Chaneliere, S. Four, J.L. Autran, R.A.B. Devine, N.P. Sandler, J. Appl. Phys. 83 (1998) 4823.
- (1998) J. Appl. Phys. , vol.83 , pp. 4823
- Chaneliere, C.¹ Four, S.² Autran, J.L.³ Devine, R.A.B.⁴ Sandler, N.P.⁵

11
- 0031150211
- R.A.B. Devine, C. Chaneliere, J.L. Autran, B. Balland, P. Paillet, J.L. Leray, Microelectron. Eng. 36 (1997) 61.
- (1997) Microelectron. Eng , vol.36 , pp. 61
- Devine, R.A.B.¹ Chaneliere, C.² Autran, J.L.³ Balland, B.⁴ Paillet, P.⁵ Leray, J.L.⁶

12
- 0014536483
- D. Frohman-Bentchkowsky, M. Lenzlinger, J. Appl. Phys. 40 (1969) 3307.
- (1969) J. Appl. Phys. , vol.40 , pp. 3307
- Frohman-Bentchkowsky, D.¹ Lenzlinger, M.²

13
- 0141817672
- J.G. Simmons, Phys. Rev. 155 (1967) 657.
- (1967) Phys. Rev. , vol.155 , pp. 657
- Simmons, J.G.¹

14
- 36849101960
- J.R. Yeargan, H.L. Taylor, J. Appl. Phys. 39 (1968) 5600.
- (1968) J. Appl. Phys. , vol.39 , pp. 5600
- Yeargan, J.R.¹ Taylor, H.L.²

15
- 36849108306
- S.M. Sze, J. Appl. Phys. 38 (1967) 2951.
- (1967) J. Appl. Phys. , vol.38 , pp. 2951
- Sze, S.M.¹

16
- 0032073164
- S. Ezhilvalavan, T.Y. Tseng, J. Appl. Phys. 83 (1998) 4797.
- (1998) J. Appl. Phys. , vol.83 , pp. 4797
- Ezhilvalavan, S.¹ Tseng, T.Y.²

17
- 0040322495
- F.C. Chiu, J.J. Wang, J.Y. Lee, S.C. Wu, J. Appl. Phys. 81 (1997) 6911.
- (1997) J. Appl. Phys. , vol.81 , pp. 6911
- Chiu, F.C.¹ Wang, J.J.² Lee, J.Y.³ Wu, S.C.⁴

18
- 0008472706
- K.I. Lundström, C.M. Svensson, IEEE Trans. Electron Devices 19 (1972) 826.
- (1972) IEEE Trans. Electron Devices , vol.19 , pp. 826
- Lundström, K.I.¹ Svensson, C.M.²

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