Trap-assisted recombination in semiconductors: Application to group III gallium nitride material and junctions

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 81, Issue 6, 2001, Pages 591-612

  Mohammad, S Noor ^a  

^a Howard University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035384371     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642810108225454     Document Type: Article

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