Quantitative SIMS analysis of SiC

Surface and Interface Analysis

Volumn 35, Issue 6, 2003, Pages 491-495

  Kudriavtsev, Yu ^a   Villegas, A ^a   Godines, A ^a   Asomoza, R ^a   Usov, I ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSITY OF NORTH CAROLINA   (United States)

Author keywords

Ion implantation; SiC; SIMS

Indexed keywords

ALUMINUM; BERYLLIUM; BORON; CHEMICAL ANALYSIS; HYDROGEN; ION IMPLANTATION; NEGATIVE IONS; NITROGEN; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICON;

CLUSTER IONS; REAL OXYGEN DISTRIBUTION; RELATIVE SENSITIVE FACTORS;

SILICON CARBIDE;

EID: 0037789564     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1561     Document Type: Article

References (7)

1. Wilson R.G. Stevie, F.A., Magee C.W. Secondary Ion Mass Spectrometry. A Practical Handbook for Depth Profiling and Bulk Impurity Analysis. John Wiley: Chichester, 1989; p. 543.
2. IMS-6f User's Guide. Cameca: France; 1995.
3. Burenkov A.F., Komarov F.F., Kumakhov M.A., Temkin M.M. Tables of spatial distribution of ion-implanted dopant. Minsk: Byelarussian State University, 1980 (In Russian).
4. Linnarsson M.K., Svensson B.G. In Proceedings of Tenth International Conference on Secondary Ion Mass Spectrometry, SIMS X, Benninghoven A, Hagenhoff B (eds.) John Wiley: Chichester, 1997, pp. 553-556.
5. Marie, Y., Bieck, W., Migeon H.-M. Proceedings of Tenth International Conference on Secondary Ion Mass Spectrometry, SIMS X, Benninghoven A, Hagenhoff B (eds). John Wiley: Chichester, 1997; pp. 685-688.
6. Usov I.O., Suvorova A.A., Sokolov V.V., Kudriavtsev Y.A., Suvorov A.V. J. Appl. Phys. 1999; 86: 6039.
7. Gerhard W., Oechsner H. Z. Phys. B. 1975; 22: 41.