Effects of annealing on residual stress and strain gradient of doped polycrystalline SiC thin films

Electrochemical and Solid-State Letters

Volumn 11, Issue 4, 2008, Pages

  Roper, Christopher S ^a,d   Radmilovic, Velimir ^b   Howe, Roger T ^c   Maboudian, Roya ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Stanford University   (United States)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FILM PREPARATION; POLYCRYSTALLINE MATERIALS; RESIDUAL STRESSES; STRAIN MEASUREMENT;

COMPRESSIVE STRAIN GRADIENT SHIFTS; OXYGEN IMPURITY DIFFUSION; RESIDUAL STRESS SHIFTS;

SILICON CARBIDE;

EID: 39349107860     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2831906     Document Type: Article

References (17)

1. D. Gao, M. B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Maboudian, IEEE Sens. J. ISJEAZ 1530-437X 10.1109/JSEN.2004.828859, 4, 441 (2004).
2. C. A. Zorman, S. Rajgopal, X. A. Fu, R. Jezeski, J. Melzak, and M. Mehregany, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.1506461, 5, G99 (2002).
3. C. S. Roper, V. Radmilovic, R. T. Howe, and R. Maboudian, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2208911, 153, C562 (2006).
4. M. B. J. Wijesundara, C. R. Stoldt, C. Carraro, R. T. Howe, and R. Maboudian, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(02)00782-4, 419, 69 (2002).
5. X. A. Fu, R. Jezeski, C. A. Zorman, and M. Mehregany, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1640781, 84, 341 (2004).
6. C. S. Roper, R. T. Howe, and R. Maboudian, J. Micromech. Microeng. JMMIEZ 0960-1317 10.1088/0960-1317/16/12/029, 16, 2736 (2006).
7. D. Gao, M. B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Maboudian, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1648067, 22, 513 (2004).
8. A. E. Franke, J. M. Heck, T. J. King, and R. T. Howe, J. Microelectromech. Syst. JMIYET 1057-7157 10.1109/JMEMS.2002.805051, 12, 160 (2003).
9. Y. Kudriavtsev, A. Villegas, A. Godines, R. Asomoza, and I. Usov, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.1561, 35, 491 (2003).
10. P. A. Krulevitch, Ph.D. Thesis, Mechanical Engineering Department, University of California at Berkeley, Berkeley, CA (1994), p. 231.
11. T. I. Kamins, Polycrystalline Silicon for Integrated Circuit Applications, Kluwer Academic Publishers, Boston, MA (1988).
12. A. van der Drift, Philips Res. Rep. PRREA9 0031-7918, 22, 267 (1967).
13. S. Lopez, H. M. Dunlop, M. Benmalek, G. Tourillon, M. S. Wong, and W. D. Sproul, Surf. Interface Anal. SIANDQ 0142-2421, 25, 315 (1997).
14. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-Ray Photoelectron Spectroscopy, Perkin-Elmer, Eden Prairie, MN (1992).
15. D. R. Lide, CRC Handbook of Chemistry and Physics, CRC Press, Taylor and Francis Group, Boca Raton, FL (2006).
16. M. A. Elkhakani, M. Chaker, A. Jean, S. Boily, H. Pepin, J. C. Kieffer, and S. C. Gujrathi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.354635, 74, 2834 (1993).
17. M. Furtsch, M. Offenberg, H. Munzel, and J. R. Morante, Sens. Actuators, A SAAPEB 0924-4247 10.1016/S0924-4247(98)00287-8, 76, 335 (1999).