Nitrogen doping of polycrystalline 3C-SiC films grown using 1,3-disilabutane in a conventional LPCVD reactor

Journal of Crystal Growth

Volumn 259, Issue 1-2, 2003, Pages 18-25

  Wijesundara, Muthu B J ^a   Gao, Di ^a   Carraro, Carlo ^a   Howe, Roger T ^b   Maboudian, Roya ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A1. Electrical characterization; A1. Microelectromechanical systems; A1. Nitrogen doping; A1. Single precursor; A3. Chemical vapor deposition; B1. Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); NITROGEN; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

PRECURSORS;

THIN FILMS;

EID: 0141964094     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01573-2     Document Type: Article

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