Electrical characterization of n-type polycrystalline 3C-silicon carbide thin films deposited by 1,3-disilabutane

Journal of the Electrochemical Society

Volumn 153, Issue 6, 2006, Pages

  Zhang, Jingchun ^a,b   Howe, Roger T ^a   Maboudian, Roya ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUTANE; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); GRAIN BOUNDARIES; LATTICE CONSTANTS; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE;

CRYSTALLINE QUALITY; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; N-TYPE DOPING; TEMPERATURE COEFFICIENT;

THIN FILMS;

EID: 33646423286     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2188327     Document Type: Article

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