A new strained-silicon channel trench-gate power MOSFET: Design and analysis

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3299-3304

  Saxena, Raghvendra S ^a   Kumar, M Jagadesh ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Breakdown voltage; On resistance; Power MOSFET; Si1 xGex; Strained Si; Trench gate

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; GERMANIUM; IONIZATION OF GASES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

BREAKDOWN VOLTAGE; ON-RESISTANCE; POWER MOSFET; SI1-XGEX; STRAINED SI; TRENCH GATE;

MOSFET DEVICES;

EID: 56549101376     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2004645     Document Type: Article

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