Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width

IEEE Electron Device Letters

Volumn 24, Issue 11, 2003, Pages 704-706

  Yang, Xin ^a   Liang, Yung C ^a   Samudra, Ganesh S ^a   Liu, Yong ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Breakdown voltage; Ideal silicon limit; Ideal superjunction limit; Power superjunction MOSFET; Specific on resistance

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRODES; GATES (TRANSISTOR); LEAKAGE CURRENTS;

IDEAL SUPERJUNCTION LIMIT; SPECIFIC ON-RESISTANCE;

MOSFET DEVICES;

EID: 0242662121     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.819268     Document Type: Article

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