Novel power MOS devices with SiGe/Si heterojunctions

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 109-112

  Li, P ^a   Su, Y ^a   You, M ^a   Li, X ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CONTACTS; PERFORMANCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

EMITTER INJECTION EFFICIENCY; SCHOTTKY CONTACT; SILICON GERMANIUM COMPOUNDS;

MOS DEVICES;

EID: 0034449070     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. T SiGe HBT technology
2. max
3. A heterojunction bipolar transistor with a thin Si emitter
4. Optimum design of power MOSFET's
5. Trench DMOS transistor technology for high-current (100A range) swithing
6. The SINFET- A schottky injection MOS-gated power transistor
7. Lateral MOS-gated power devices-a unified view
8. Analysis of turn-off characteristics of lateral merged MOS-bipolar transistors