A novel dual gate strained-silicon channel trench power MOSFET for improved performance

Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008

Volumn 3, Issue , 2008, Pages 602-604

  Saxena, Raghvendra Sahai ^a   Kumar, M Jagadesh ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Compositionally graded Si1 x Gex buffer; Dual gate; Power MOSFET; Si1 xGex; Strained Si; Trench gate

Indexed keywords

COMMERCE; EXHIBITIONS; NANOTECHNOLOGY; NONMETALS; PHOTONICS; SILICON; TECHNOLOGY;

COMPOSITIONALLY GRADED SI1-X GEX BUFFER; DUAL GATE; DUAL GATES; IMPROVED PERFORMANCE; POWER MOSFET; SI1-XGEX; SILICON CHANNELS; STRAINED SI; STRAINED SI CHANNEL; TRADE SHOWS; TRENCH GATE; TRENCH POWER MOSFET;

MOSFET DEVICES;

EID: 52649171340     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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