The formation of trench-gate power MOSFETs with a SiGe channel region

Semiconductor Science and Technology

Volumn 21, Issue 6, 2006, Pages 799-802

  Juang, M H ^a   Chueh, W C ^a   Jang, S L ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; TRENCHING;

BLOCKING VOLTAGE; MOLE FRACTION; SIGE CHANNEL REGIONS; TRENCH-GATE POWER;

MOSFET DEVICES;

EID: 33646733421     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/6/016     Document Type: Article

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