A new strained-Si channel power MOSFET for high performance applications

ETRI Journal

Volumn 28, Issue 2, 2006, Pages 253-256

  Cho, Young Kyun ^a   Roh, Tae Moon ^a   Kim, Jongdae ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Breakdown voltage; High voltage; Hot electron; Power device; Strained Si

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENT CONTROL; ELECTRIC CURRENTS; SILICON; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

HIGH VOLTAGE; HOT ELECTRONS; POWER DEVICES; SATURATION REGIMES; STRAINED-SI;

MOSFET DEVICES;

EID: 33646809403     PISSN: 12256463     EISSN: 12256463     Source Type: Journal    
DOI: 10.4218/etrij.06.0205.0067     Document Type: Article

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