On the Specific On-Resistance of High-Voltage and Power Devices

IEEE Transactions on Electron Devices

Volumn 51, Issue 3, 2004, Pages 492-499

  Zingg, René P ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

High voltage techniques; Power bipolar transistors; Power FETs; Power semiconductor devices; Silicon on insulator (SOI) technology

Indexed keywords

ANODES; CARRIER MOBILITY; CATHODES; ELECTRIC BREAKDOWN; ELECTRIC NETWORK TOPOLOGY; ELECTRIC RESISTANCE; IONIZATION; PROBABILITY; SEMICONDUCTOR DIODES; SILICON ON INSULATOR TECHNOLOGY;

HIGH-VOLTAGE TECHNIQUES; POWER BIPOLAR TRANSISTORS; POWER SEMICONDUCTOR DEVICES;

BIPOLAR TRANSISTORS;

EID: 1642306307     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822948     Document Type: Article

References (23)

1. C. Hu, "Optimum doping profile for minimum ohmic resistance and high-breakdown voltage," IEEE Trans. Electron Devices, vol. ED-26, pp. 243-244, Mar. 1979.
2. S. C. Sun and J. D. Plummer, "Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistor," IEEE Trans. Electron Devices, vol. ED-27, pp. 356-367, Feb. 1980.
3. G. Deboy, M. März, J.-P. Stengl, H. Strak, J. Tihanyi, and H. Weber, "A new generation of high voltage MOSFET's breaks the limit line of silicon," in IEDM Tech. Dig., 1998, pp. 683-685.
4. R. P. Zingg, "New benchmark for RESURF, SOI, and super-junction power devices," in Proc. ISPSD, 2001, pp. 343-346.
5. S. M. Sze and G. Gibbons, "Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Si, GaAs, and GaP," Appl. Phys. Lett., vol. 8, no. 5, pp. 111-113, 1966.
6. W. Fulop, "Calculation of avalanche breakdown of Si p-n junctions," Solid State Electron., vol. 10, pp. 39-43, 1967.
7. J. Maserjian, "Determination of avalanche breakdown in pn junctions," J. Appl. Phys., vol. 30, pp. 1613-1614, 1959.
8. R. van Overstraeten and H. De Man, "Measurement of the ionization rates in diffused silicon p-n junctions," Solid State Electron., vol. 13, pp. 583-608, 1970.
9. W. N. Grant, "Electron and hole ionization rates in epitaxial silicon at high electric fields," Solid State Electron., vol. 16, pp. 1189-1203, 1973.
10. M. Bhatnagar and B. J. Baliga, "Analysis of silicon carbide power device performance," in Proc. ISPSD, 2001, pp. 176-180.
11. J. A. Appels, M. G. Collet, P. A. H. Hart, H. M. J. Vaes, and J. F. C. M. Verhoeven, "Thin layer high-voltage devices (RESURF devices)," Philips J. Res., vol. 35, no. 1, pp. 1-13, 1980.
12. D. J. Coe, "High voltage semiconductor device," US patent US4,754,310, June 28, 1988.
13. A. Ludikhuize, "High-voltage DMOS and PMOS in analog IC's," in IEDM Tech. Dig., 1982, pp. 81-84.
14. D. R. Disney, A. K. Paul, M. Darwish, R. Basecki, and V. Rumennik, "A new lateral MOSFET with dual conduction paths," in Proc. ISPSD, 2001, pp. 399-402.
15. T. Fujihira, "Theory of semiconductor superjunction devices," Jpn. J. Appl. Phys., vol. 36, pp. 6254-6262, 1997.
16. A. G. M. Strollo and E. Napoli, "Optimal ON-Resistance versus breakdown voltage tradeoff in superjunction power devices: A novel analytical model," IEEE Trans. Electron Devices, vol. 48, pp. 2161-2167, Sept. 2001.
17. A. Ludikhuize, "A review of RESURF technology," in Proc. ISPSD, 2000, pp. 11-18.
18. S. Merchant, E. Arnold, H. Baumgart, S. Mukherjee, H. Pein, and R. Pinker, "Realization of high breakdown voltage (> 700 V) in thin SOI devices," in Proc. ISPSD, 1991, pp. 31-34.
19. D. M. Caughey and R. E. Thomas, "Carrier mobility in silicon empirically related to doping and field," Proc. IEEE, vol. IRE-55, pp. 2192-2193, 1967.
20. C. Baccarani and P. Ostoja, "Electron mobility empirically related to the phosphorous concentration in silicon," Solid State Electron., vol. 16, pp. 579-580, 1975.
21. 2 680 V silicon superjunction MOSFET," in Proc. ISPSD, 2002, pp. 241-244.
22. R. van Dalen and C. Rochefort, "Vertical multi-RESURF MOSFET's exhibiting record low specific resistance," in IEDM Tech. Dig., 2003, pp. 737-740.
23. T. Kobayashi, H. Abe, Y. Niimura, T. Yamada, A. Kurosaki, T. Hosen, and T. Fujihira, "High-voltage power MOSFET reached almost to the silicon limit," in Proc. ISPSD, 2001, pp. 435-438.