Fabrication of trench-gate power MOSFETs by using a dual doped body region

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1079-1085

  Juang, M H ^a   Chen, W T ^a   Ou Yang, C I ^a   Jang, S L ^a   Lin, M J ^b   Cheng, H C ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPUTER SIMULATION; DIFFUSION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; OPTIMIZATION;

BLOCKING VOLTAGE; LOW ENERGY IMPLANTATION;

MOSFET DEVICES;

EID: 1842843665     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.07.007     Document Type: Article

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