A 0.35um trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switching

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 377-380

  Narazaki, A ^a   Maruyama, J ^a   Kayumi, T ^a   Hamachi, H ^a   Moritani, J ^a   Hine, S ^a  

^a Ryouden Semicon System Eng Corp   (Japan)

Author keywords

High avalanche current; Low on resistance; Trench MOSFET

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; GATES (TRANSISTOR); PERFORMANCE; SEMICONDUCTOR DEVICE STRUCTURES;

AVALANCHE CURRENT DENSITY; INDUCTIVE SWITCHING; SPECIFIC ON-RESISTANCE; TRENCH GATE;

MOSFET DEVICES;

EID: 0034449612     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. COOLMOS - a new milestone in high voltage power MOS
2. A novel 30V P-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage