Schottky-barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETs

IEEE Electron Device Letters

Volumn 28, Issue 2, 2007, Pages 123-125

  Lousberg, G P ^a,b   Yu, Hong Y ^a   Froment, B ^a   Augendre, E ^a   De Keersgieter, A ^a   Lauwers, A ^a   Li, M F ^c   Absil, P ^a   Jurczak, M ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LIÈGE   (Belgium)

^c FUDAN UNIVERSITY   (China)

Author keywords

PtSIx; Schottky barrier source drain field effect transistors (SBFETs); Schottky barrier(SB) lowering

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

IMAGE-FORCE MECHANISM; SCHOTTKY-BARRIER SOURCE/DRAIN FIELD-EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 33847358122     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.889045     Document Type: Article

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